多孔質シリコン層中の化学結合に及ぼす室温エージングの影響

• 福田 芳雄

  金属材料技術研究所

• 古屋 一夫

  金属材料技術研究所

書誌事項

タイトル別名

• Room Temperature Aging Effects on Porous Silicon Layer Chemical Bonds.
• タコウシツ シリコンソウチュウ ノ カガク ケツゴウ ニ オヨボス シツオン

抄録

Changes in chemical bonds in porous silicon (PS) during 192 days of aging were studied using transmission Fourier transform infrared spectroscopy in combination with photoluminescence (PL) measurement. PS exhibits PL peaking at about 650nm, but the PL peak position does not change much. PL intensity increases with aging time, and the intensity of infrared absorption bands other than CH_x(x=1-3) changes. Si-H and SiH₂ bands decrease in intensity with aging time. The O₃Si-H band intensity increases, then levels off. C=O and O-H bands increase in intensity with aging time, but not in correlation with PL intensity. The Si-O band increases with aging time and is closely correlated with PL intensity. These results suggest that some oxygenrelated effect participates in PS luminescence.

収録刊行物

• 表面技術

  表面技術 49 (1), 63-67, 1998

  一般社団法人 表面技術協会

キーワード

• Porous Silicon
• Chemical Bond
• Aging
• Photoluminescence

詳細情報

• CRID: 1390282679091170304
• NII論文ID: 10002108486
• NII書誌ID: AN1005202X
• DOI: 10.4139/sfj.49.63
• ISSN: 18843409
• ISSN: 09151869
• NDL書誌ID: 4367225
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4367225
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可