多孔質シリコン層中の化学結合に及ぼす室温エージングの影響 Room Temperature Aging Effects on Porous Silicon Layer Chemical Bonds

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Changes in chemical bonds in porous silicon (PS) during 192 days of aging were studied using transmission Fourier transform infrared spectroscopy in combination with photoluminescence (PL) measurement. PS exhibits PL peaking at about 650nm, but the PL peak position does not change much. PL intensity increases with aging time, and the intensity of infrared absorption bands other than CH<sub>x</sub>(x=1-3) changes. Si-H and SiH<sub>2</sub> bands decrease in intensity with aging time. The O<sub>3</sub>Si-H band intensity increases, then levels off. C=O and O-H bands increase in intensity with aging time, but not in correlation with PL intensity. The Si-O band increases with aging time and is closely correlated with PL intensity. These results suggest that some oxygenrelated effect participates in PS luminescence.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 49(1), 63-67, 1998-01-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002108486
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4367225
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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