モード変換型マイクロ波プラズマMOCVD法による(111)配向ZrO_2膜の低温堆積 [in Japanese] Low-Temperature(111)Oriented ZrO_2 Film Deposition Using Mode-Converted Micromove Plasma MOCVD [in Japanese]
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ZrO<sub>2</sub> films were deposited on 12×17×0.5mm Si(100) single-crystal substrates or 9×18×0.5mm glass substrates using plasma-enhanced metal organic chemical vapor deposition (PE-MOCVD) with Zr (DPM) and oxygen as reactants. A mode converter was used to generate the plasma. The mode converter changes the microwave mode from TE<sub>10</sub> (rectangular) to TM<sub>01</sub> (circular), rising plasma density. We anticipated that ZrO<sub>2</sub> film would be deposited at a lower temperature. The film obtained at 500°C was polycrystalline, but a predominantly (111)-orientated film was obtained at 300°C. Similar results were obtained on Si and glass substrates. No impurity such as hydrocarbon or carbon was detected in films. ZrO<sub>2</sub> films had a tetragonal phase with lattice parameters of a=b=0.507nm and c=0.518nm. ZrO<sub>2</sub> films deposited at 300°C at different microwave powers exhibited the same X-ray diffraction patterns. Film orientation was independent of microwave power. Film deposited for one hour at 300°C was 90nm thick with 30nm roughness and a refractive index of 2.10. Film growth activation energy was 14.5kJ/mol. We concluded that plasma generated by converting microwave to TM<sub>01</sub> mode deposited preferred (111)-oriented ZrO<sub>2</sub> film at a low temperature of 300°C.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 49(3), 287-291, 1998-03-01
The Surface Finishing Society of Japan