Alイオン注入したTiN膜の高温酸化 [in Japanese] High-Temperature Oxidation of Aluminum-Ion-Implanted Titanium Nitride Films [in Japanese]
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Thermal oxidation behavior of aluminum-ion-implanted titanium nitride films has been studied in dry oxygen atmospheres. TiN films about 2μm thick were prepared on austenitic stainless steel AISI304 substrates using hollow cathode discharge ion plating. Al ions were implanted at 50keV and doses of 1×10<sup>17</sup> and 3×10<sup>17</sup>ions/cm<sup>2</sup>. Continuous oxidation-weight-gain tests on TiN films implanted with Al, the structure of the oxide layers characterized by X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) used to analyze the chemical bonding states of elements in surface layers were used to evaluate samples. As-deposited TiN films were oxidized at above 873K and had rutile TiO<sub>2</sub> near the surface. The oxidation rate of Al-implanted TiN films slowed in initial oxidation. The Al<sub>2p</sub> XPS spectrum of TiN film implanted with 3×10<sup>17</sup>Al/cm<sup>2</sup> and oxidized at 1073K for 2 hours revealed Al<sub>2</sub>O<sub>3</sub> at the surface, although no oxides were found in XRD patterns. Al oxides formed on the Al-implanted TiN films are considered to inhibit the film oxidation. Oxidation in Al-implanted TiN films resembles that in TiAlN films.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 49(3), 316-319, 1998-03-01
The Surface Finishing Society of Japan