高温リン酸によるファインセラミックスのフォトエッチングのためのポリイミドレジスト Polyimide Resist for Photoetching of Fine Ceramics in Hot Phosphoric Acid

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Polyimide film was studied as a resist for ceramic etching in condensed phosphoric acid. Resist films were formed with three different polyimide precursors developed as materials for passivation, insulation, or protective layers on LSIs. After etching alumina ceramic from 260°C to 320°C, we measured changes in resist thickness, resist film breakdown ratio, and etch factors. Resist film chemical resistance depended strongly on the type of polyimide precursor. Photosensitive polyimide, Photoneece UR-3140<sup>®</sup>, showed superior resistance to phosphoric acid at up to 320°C The etch factor was relatively low, around 1, however, regardless of resist film formation conditions, indicating that some further process, e. g., application of an adhesion promoter, was needed to enhance resist adhesion to substrates.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 49(6), 637-642, 1998-06-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002109645
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4502333
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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