Polyimide Resist for Photoetching of Fine Ceramics in Hot Phosphoric Acid.

• MAKINO Eiji

  Grad. School of Eng., Hokkaido Univ.

• SHIBATA Takayuki

  Grad. School of Eng., Hokkaido Univ.

• YAMADA Yoshihiko

  Grad. School of Eng., Hokkaido Univ.

Bibliographic Information

Other Title

• 高温リン酸によるファインセラミックスのフォトエッチングのためのポリイミドレジスト
• コウオン リンサン ニヨル ファイン セラミックス ノ フォト エッチング ノ

Abstract

Polyimide film was studied as a resist for ceramic etching in condensed phosphoric acid. Resist films were formed with three different polyimide precursors developed as materials for passivation, insulation, or protective layers on LSIs. After etching alumina ceramic from 260°C to 320°C, we measured changes in resist thickness, resist film breakdown ratio, and etch factors. Resist film chemical resistance depended strongly on the type of polyimide precursor. Photosensitive polyimide, Photoneece UR-3140^®, showed superior resistance to phosphoric acid at up to 320°C The etch factor was relatively low, around 1, however, regardless of resist film formation conditions, indicating that some further process, e. g., application of an adhesion promoter, was needed to enhance resist adhesion to substrates.

Journal

• Journal of The Surface Finishing Society of Japan

  Journal of The Surface Finishing Society of Japan 49 (6), 637-642, 1998

  The Surface Finishing Society of Japan

Keywords

• Photoetching
• Fine Ceramics
• Photoresist
• Polyimide
• Phosphoric Acid

Details

• CRID: 1390001204114551808
• NII Article ID: 10002109645
• NII Book ID: AN1005202X
• DOI: 10.4139/sfj.49.637
• ISSN: 18843409
• ISSN: 09151869
• NDL BIB ID: 4502333
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4502333
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed