セラミックスのフォトエッチングのための環化ポリブタジエンレジスト膜の形成条件 Formation of Cyclized Polybutadiene Resist Film for Ceramic Photoetching

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This paper describes the effects of conditions, such as prebaking length, exposure energy, and postbaking temperature, on polybutadiene resist film formation, when obtaining high chemical resistance to hot phosphoric acid etchant. After alumina ceramic was etched at temperatures from 260°C to 320°C, we measured the change in resist thickness, resist film breakdown ratio, and etch factors. Polybutadiene molecules are cross-linked both photolytically and pyrolytically, so postbaking critically affects the enhancing of the resist's thermal and chemical stability. Prebaking at 80°C for 30min, exposure at 7-9mJ/cm<sup>2</sup>, and postbaking at 300°C for 30min yielded a highly chemically resistant, strongly adhesive, optimal resist film. The etch factor increased with increasing etching temperature, probably due to decreased acid viscosity, becoming about 2 at an etching temperature of 300°C. At higher etching temperatures, however, the etch factor decreased and the resist breakdown ratio increased, indicating that the applicable maximum etching temperature was 300°C for the polybutadiene resist.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 49(7), 775-780, 1998-07-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002110018
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4514781
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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