RFスパッタリングによるZnO透明導電薄膜特性へのAr圧力と基板温度の影響 Effects of Ar Pressure and Substrate Temperature on Properties of Transparent and Conductive ZnO Thin Films Prepared by RF Sputtering

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Transparent conductive Al-doped ZnO thin films were prepared on glass substrates by using radio frequency (RF) diode sputtering equipment with pure Ar gas and an Al<sub>2</sub>O<sub>3</sub>-mixed ZnO ceramic target. The samples, with constant thickness of 0.5μm, were produced by changing Ar pressure, annealing temperature, and substrate temperature in sputtering. Their electrical and optical properties and adhesion force to glass substrates were evaluated. Transparent films had low resistivity of 2.7×10<sup>-3</sup>Ω·cm and infrared ray cutoff, obtained by optimum case of Ar pressure of 1.3Pa and the substrate temperature of 723K. The adhesion force of the films were 1.7GPa in shear stress, tested by the scratch method. Films sputtered at higher Ar pressure of 13Pa also showed low resistivity of 3.4×10<sup>-3</sup>Ω·cm and sufficient infrared ray cutoff without substrate heating, although they tinged yellow and had a low adhesion force of 0.6GPa. The low adhesion force of these films was improved by postannealing above 673K.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 49(9), 996-1002, 1998-09-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002110604
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4557751
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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