電流遮断法による単結晶シリコン陽極酸化の解析 Analysis Anodic Oxidation of Single Crystalline Si by Current Interruption

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Current interruption was used to measure silicon dioxide layer capacitance and Si oxidation activation energy at 20∼70°C.<br>A current interrupter was built using an electromagnetic relay and integrated circuits. When Si was anodized in an ethylene glycol solution, the current between the n-type Si wafer anode and Pt cathode was interrupted for 5ms on galvanostatic electrolysis, and the transient phenomena of voltage waveform, form which short term anodic oxidation kinetic parameters are obtained, were observed by a digital memory scope.<br>Oxide film capacitance increased rapidly beyond a current density of 1mA cm<sup>-2</sup>. Oxide film capacitance increased with electrolyte temperature up to about 40°C, but decreased as temperature increased from 45°C to 50°C. Activation energy for silicon anodic oxidation was about 23.7kJ mol<sup>-1</sup> over 55°C and 122kJ mol<sup>-1</sup> at 20∼40°C.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 50(3), 278-281, 1999-03-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002112039
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4677067
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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