電流遮断法による単結晶シリコン陽極酸化の解析

• 柚賀 正光

  茨城大学大学院理工学研究科

• 竹内 学

  茨城大学工学部

• 大山 昌憲

  東京工業高等専門学校電気工学科

書誌事項

タイトル別名

• Analysis of Anodic Oxidation of Single Crystalline Si by Current Interruption.
• デンリュウ シャダンホウ ニ ヨル タンケッショウ シリコン ヨウキョク サンカ ノ カイセキ

抄録

Current interruption was used to measure silicon dioxide layer capacitance and Si oxidation activation energy at 20∼70°C.<br>A current interrupter was built using an electromagnetic relay and integrated circuits. When Si was anodized in an ethylene glycol solution, the current between the n-type Si wafer anode and Pt cathode was interrupted for 5ms on galvanostatic electrolysis, and the transient phenomena of voltage waveform, form which short term anodic oxidation kinetic parameters are obtained, were observed by a digital memory scope.<br>Oxide film capacitance increased rapidly beyond a current density of 1mA cm^-2. Oxide film capacitance increased with electrolyte temperature up to about 40°C, but decreased as temperature increased from 45°C to 50°C. Activation energy for silicon anodic oxidation was about 23.7kJ mol^-1 over 55°C and 122kJ mol^-1 at 20∼40°C.

収録刊行物

• 表面技術

  表面技術 50 (3), 278-281, 1999

  一般社団法人 表面技術協会

キーワード

• Anodic Oxidation
• Single Crystalline Silicon
• Current Interrupter
• Activation Energy for Anodic Oxidation

詳細情報

• CRID: 1390282679091654016
• NII論文ID: 10002112039
• NII書誌ID: AN1005202X
• DOI: 10.4139/sfj.50.278
• ISSN: 18843409
• ISSN: 09151869
• NDL書誌ID: 4677067
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4677067
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可