Analysis of Anodic Oxidation of Single Crystalline Si by Current Interruption.

• YUGA Masamitsu

  Graduate School of Sci. and Eng., Ibaraki Univ.

• TAKEUCHI Manabu

  Dept. of Electrical and Electronic Eng., Ibaraki Univ.

• OHYAMA Masanori

  Dept. of Electrical Eng., Tokyo National College of Technology

Bibliographic Information

Other Title

• 電流遮断法による単結晶シリコン陽極酸化の解析
• デンリュウ シャダンホウ ニ ヨル タンケッショウ シリコン ヨウキョク サンカ ノ カイセキ

Abstract

Current interruption was used to measure silicon dioxide layer capacitance and Si oxidation activation energy at 20∼70°C.<br>A current interrupter was built using an electromagnetic relay and integrated circuits. When Si was anodized in an ethylene glycol solution, the current between the n-type Si wafer anode and Pt cathode was interrupted for 5ms on galvanostatic electrolysis, and the transient phenomena of voltage waveform, form which short term anodic oxidation kinetic parameters are obtained, were observed by a digital memory scope.<br>Oxide film capacitance increased rapidly beyond a current density of 1mA cm^-2. Oxide film capacitance increased with electrolyte temperature up to about 40°C, but decreased as temperature increased from 45°C to 50°C. Activation energy for silicon anodic oxidation was about 23.7kJ mol^-1 over 55°C and 122kJ mol^-1 at 20∼40°C.

Journal

• Journal of The Surface Finishing Society of Japan

  Journal of The Surface Finishing Society of Japan 50 (3), 278-281, 1999

  The Surface Finishing Society of Japan

Keywords

• Anodic Oxidation
• Single Crystalline Silicon
• Current Interrupter
• Activation Energy for Anodic Oxidation

Details

• CRID: 1390282679091654016
• NII Article ID: 10002112039
• NII Book ID: AN1005202X
• DOI: 10.4139/sfj.50.278
• ISSN: 18843409
• ISSN: 09151869
• NDL BIB ID: 4677067
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4677067
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed