レーザーアブレーション法による導波路型レーザー結晶の作製 -Si基板上への作製を目指して- Fabrication of Waveguide Laser Crystals by Laser Ablation Method -toward the Fabrication of Laser Crystals on Si Substrates-

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OEIC (Optoelectronic integrated circuit) which interconnects various optical and electronic elements on thesame substrate, is a promising device in near future. The fabrication method ofoptical waveguides is desirableto be a vapor phase epitaxy and suitable for <I>in situ</I> processing. LPE (Liquid Phase Epitaxy) methods arewidely used to fabricate thin films, but recently much attention has been paid to PLD (Pulsed Laser Deposition) methods in the fabrication of optical thin films with various advantages such as adaptability to <I>in-situ</I>, processing, simple arrangement, stoichiometry of the films, epitaxial quality of complicated compoundmaterials as good as those by MBE (Molecular Beam Epitaxy) and MOCVD (Metal-Organic Chemical Vapor Deposition). In the present paper, it is experimentally shown that this PLD method is very effective andaffordable as fabrication techniques of these optical thin films.

収録刊行物

  • レーザー研究  

    レーザー研究 26(6), 415-420, 1998-06 

    The Laser Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002249482
  • NII書誌ID(NCID)
    AN00255326
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03870200
  • NDL 記事登録ID
    4511842
  • NDL 雑誌分類
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL 請求記号
    Z16-1040
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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