ArFエキシマレーザーによる半導体微細加工技術 Micro-Processing by ArF Excimer Laser

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著者

    • 笹子 勝 SASAGO Masaru
    • 技術研究組合超先端電子技術開発機構 Association of Super-Advanced Electronics Technologies(ASET)
    • 大藤 武 OHFUJI Takeshi
    • 技術研究組合超先端電子技術開発機構 Association of Super-Advanced Electronics Technologies(ASET)

抄録

KrF/ ArF excimer laser lithography technique are expected to realize 1-4 Gbit DRAMs below 0.25μm designrules. Although KrF lithography is extendable for less than 0.2 μm patterning, the introduction of ArF lithography is much simple solution, if the infrastructures of ArF lithography are available. To realize ArFlithography in mass production, the development of ArF resists, exposure tools, and masks are important.Regarding ArF resists, practical chemically amplified resist has been developed with alicyclic polymers. Thedevelopment of dry-developed processes using silylation techniques also improves the resolution. Thecombination of recent ArF resist, anti-reflecting coating and attenuating phase shifting mask can producedevice patterns with a 0.12 μm design rule. The use of TSI can produce 0.09μm Line & Space (L&S) patternswith Levenson phase shift mask. These results imply that ArF lithography can be used for multi-generation indevice manufacturing. ArF lithography will be introduced in mass production as post-KrF lithography in thenear future.

収録刊行物

  • レーザー研究  

    レーザー研究 26(6), 421-425, 1998-06 

    The Laser Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002249524
  • NII書誌ID(NCID)
    AN00255326
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03870200
  • NDL 記事登録ID
    4511843
  • NDL 雑誌分類
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL 請求記号
    Z16-1040
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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