Laser-Induced-Fluorescence Study of SiH2 in a RF SiH4/SiH2Cl2 Plasma.

• KONO Akihiro

  <I>Center for Cooperative Research in Advanced Science and Technology, Nagoya University</I>

• HIROSE Satoshi

  <I>Department of Quantum Engineering, Graduate School of Engineering, Nagoya University</I>

• GOTO Toshio

  <I>Department of Quantum Engineering, Graduate School of Engineering, Nagoya University</I>

書誌事項

タイトル別名

• Laser-Induced-Fluorescence Study of SiH

抄録

The behavior of the SiH₂ radical in a RF (13.56 MHz) SiH₄/SiH₂Cl₂ mixture plasma wasinvestigated usinglaser-induced fluorescence spectroscopy with pulsed as well as CW laser excitation. Itwas shown that SiH₂ inthe mixture plasma is mainly produced via dissociation of SiH₄ and it is less reactivewith SiH₂Cl₂ than with SiH₄. The SiH₂ density in the mixture plasma increased slightly with increasing SiH₂Cl₂ fraction, despite thedecrease in the SiH₄ density. This enhanced decomposition of SiH₄ as a result of SiH₂Cl₂ admixing was foundto be caused by the increase in the electron temperature, which resulted from the increase in the density ofelectron-attaching species produced from SiH₂Cl₂ in the plasma.

収録刊行物

• レーザー研究

  レーザー研究 26 (6), 453-457, 1998

  一般社団法人 レーザー学会

キーワード

• SiH<SUB>2</SUB>
• laser induced fluorescence
• SiH<SUB>4</SUB>
• SiH<SUB>2</SUB>Cl<SUB>2</SUB>
• RF plasma

詳細情報

• CRID: 1390001204647008128
• NII論文ID: 10002249615
• NII書誌ID: AN00255326
• DOI: 10.2184/lsj.26.453
• ISSN: 13496603
• ISSN: 03870200
• NDL書誌ID: 4511849
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4511849
• Web Site: http://www.jstage.jst.go.jp/article/lsj1973/26/6/26_6_453/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可