Laser-Induced-Fluorescence Study of SiH2 in a RF SiH4/SiH2Cl2 Plasma.

  • KONO Akihiro
    <I>Center for Cooperative Research in Advanced Science and Technology, Nagoya University</I>
  • HIROSE Satoshi
    <I>Department of Quantum Engineering, Graduate School of Engineering, Nagoya University</I>
  • GOTO Toshio
    <I>Department of Quantum Engineering, Graduate School of Engineering, Nagoya University</I>

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  • Laser-Induced-Fluorescence Study of SiH

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Abstract

The behavior of the SiH2 radical in a RF (13.56 MHz) SiH4/SiH2Cl2 mixture plasma wasinvestigated usinglaser-induced fluorescence spectroscopy with pulsed as well as CW laser excitation. Itwas shown that SiH2 inthe mixture plasma is mainly produced via dissociation of SiH4 and it is less reactivewith SiH2Cl2 than with SiH4. The SiH2 density in the mixture plasma increased slightly with increasing SiH2Cl2 fraction, despite thedecrease in the SiH4 density. This enhanced decomposition of SiH4 as a result of SiH2Cl2 admixing was foundto be caused by the increase in the electron temperature, which resulted from the increase in the density ofelectron-attaching species produced from SiH2Cl2 in the plasma.

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