有機珪素化合物の光分解・重合プロセス UV Light-Induced Decomposition and Polymerization of Organosilicon Compounds

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The application of photochemical reaction for depositing SiC thin films fromorganosilicon compounds at lowtemperatures has been exploited. Methylsilane Si (CH<SUB>3</SUB>) <SUB>4</SUB>, allylmethylsilane CH<SUB>2</SUB>=CHCH<SUB>2</SUB>Si (CH<SUB>3</SUB>) <SUB>3</SUB> andtriethylsilane SiH (C<SUB>2</SUB>H<SUB>5</SUB>) <SUB>3</SUB> are utilized as precursors for the deposition of SiC films. Synchrotron radiation (SR) in the vacuum-ultraviolet (VUV) region are used as the exciting light source. We usephoton-stimulateddesorption (PSD) and infrared (IR) spectroscopy to follow chemical changes of condencedlayers of organosiliconcaused by UV and VUV-SR irradiation. PSD data demonstrate that UV and VUV irradiation initiates thedesorption of hydrogen and carbon fragments, an indication that the photofragmentation of the organosilicon compounds occur upon UV and VUV irradiation. IR data show that Si-containing photofragments arepolymerized to form amorphous SiC.

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  • レーザー研究  

    レーザー研究 26(6), 463-467, 1998-06 

    The Laser Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002249647
  • NII書誌ID(NCID)
    AN00255326
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03870200
  • NDL 記事登録ID
    4511851
  • NDL 雑誌分類
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL 請求記号
    Z16-1040
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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