電子シャワー法によるAIN薄膜の作製 AIN Thin Films Prepared by the Electron Shower Method

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抄録

When AlN thin films are applied to surface acoustic wave (SAW) devices, c-axis oriented films and a-axis oriented films are necessary for the longitudinal wave and transversal wave, respectively. In general, when AlN thin films are prepared by sputtering and ion plating methods, the crystallographic orientation is dominantly c-axis; it is difficult to prepare films with an a-axis orientation.<br>In this study, AlN thin films were prepared by a new PVD method: the electron shower. It was found that a-axis orientation films could be prepared readily. The crystallographic orientation varied from a-axis to c-axis when the substrate voltage was changed from +20V to -400V. A high hardness (Hv 2200), high electrical resistivity (10<sup>13</sup>Ωcm) film was obtained at -200V.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(2), 152-156, 1996-02 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002255686
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    3926762
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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