ポーラスSiの微細構造と発光挙動に及ぼすHF濃度とSi基板比抵抗の影響 Influence of HF Concentration and Specific Resistivity of Substrate Si on Microstructure and Luminescence Behavior of Porous Si

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A porous silicon layer (PSL) was prepared on single crystal p-type Si (100) wafers with electrochemical etching in HF aqueous solutions of various concentrations to explore the optimum PSL preparation conditions for no exfoliation of the PSL from the substrate and for good reproducibility of visible luminescence with high intensity. The surface morphology and microstructure of the PSL were observed using various microscopic techniques (SEM, TEM and CLSM) and the surface compound of PSL was identified by FT-IR. In addition to the photoluminescence (PL), the electroluminescence (EL) emitted from the PSL during anodic oxidation in KNO<sub>3</sub> aqueous solution was measured to examine the luminescence mechanism. The microstructure of PSL prepared on Si with low specific resistivity (ρ=0.1Ωm) was columnar, whereas that prepared on Si with high specific resistivity (ρ=1kΩm) was granular and randomly oriented. The microstructure of PSL also changed depending on the HF concentration. The EL and PL intensities of PSL were both higher for ρ=1kΩm than for ρ=0.1Ωm and increased with decreasing HF concentration. The exfoliation of PSL from the substrate of ρ=1kΩm was prevented by using low current density in electrochemical etching. The optimum PSL preparation conditions were finally obtained when the specimen with specific resistivity of ρ=1kΩm was electrochemically etched in 10.4wt% HF aqueous solution under a galvanostatic condition of <i>i</i>=10Am<sup>-2</sup> for 15ks. The TEM images of PSL with high magnification (5×10<sup>5</sup>) suggest that the quantum confinement effect is operative in the visible luminescence.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(2), 157-162, 1996-02 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002255701
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    3926763
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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