マイクロ波プラズマMOCVDによる酸化シリコン薄膜の低温堆積 Low Temperature Deposition of Silicon Oxide Film by Microwave Plasma MOCVD

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Silicon oxide film was deposited on a Si substrate by microwave (2.45GHz) plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using hexamethyldisiloxane (HMDSO) as the silicon source, oxygen, and argon.<br>The influence of the deposition temperature on the quality of the deposited film and on its deposition rate was investigated by means of FT-IR, XPS, and ellipsometry.<br>In FT-IR measurement of the film, absorption bands from SiMe<sub>x</sub> and/or Si-OH were observed as impurities in the low deposition temperature range (60-170°C), but these absorption bands disappeared at higher substrate temperatures (<170°C). Post plasma treatment of the deposited film using argon-oxygen plasma was also performed in an attempt to decrease impurities in the film, and as a result the SiMe<sub>x</sub> band disappeared completely.<br>In conclusion, MOCVD enhansed by microwave argon-oxygen plasma treatment proved to be in low temperature deposition of silicon oxide film from HMDSO.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(4), 372-375, 1996-04 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002256191
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    NOT
  • ISSN
    09151869
  • NDL 記事登録ID
    3947930
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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