マイクロ波プラズマMOCVDによる酸化シリコン薄膜の低温堆積 [in Japanese] Low Temperature Deposition of Silicon Oxide Film by Microwave Plasma MOCVD [in Japanese]
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Silicon oxide film was deposited on a Si substrate by microwave (2.45GHz) plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using hexamethyldisiloxane (HMDSO) as the silicon source, oxygen, and argon.<br>The influence of the deposition temperature on the quality of the deposited film and on its deposition rate was investigated by means of FT-IR, XPS, and ellipsometry.<br>In FT-IR measurement of the film, absorption bands from SiMe<sub>x</sub> and/or Si-OH were observed as impurities in the low deposition temperature range (60-170°C), but these absorption bands disappeared at higher substrate temperatures (<170°C). Post plasma treatment of the deposited film using argon-oxygen plasma was also performed in an attempt to decrease impurities in the film, and as a result the SiMe<sub>x</sub> band disappeared completely.<br>In conclusion, MOCVD enhansed by microwave argon-oxygen plasma treatment proved to be in low temperature deposition of silicon oxide film from HMDSO.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 47(4), 372-375, 1996-04
The Surface Finishing Society of Japan