Low Temperature Deposition of Silicon Oxide Film by Microwave Plasma MOCVD.

• TSUKUDA Hiroyuki

  Japan Radio Co., Ltd.

• ITO Shigeru

  Fac. of Sci. and Eng., Science Univ. of Tokyo

• AKASHI Kazuo

  Fac. of Sci. and Eng., Science Univ. of Tokyo

Bibliographic Information

Other Title

• マイクロ波プラズマＭＯＣＶＤによる酸化シリコン薄膜の低温堆積
• マイクロハ プラズマ MOCVD ニヨル サンカ シリコン ハクマク ノ テイ

Abstract

Silicon oxide film was deposited on a Si substrate by microwave (2.45GHz) plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using hexamethyldisiloxane (HMDSO) as the silicon source, oxygen, and argon.<br>The influence of the deposition temperature on the quality of the deposited film and on its deposition rate was investigated by means of FT-IR, XPS, and ellipsometry.<br>In FT-IR measurement of the film, absorption bands from SiMe_x and/or Si-OH were observed as impurities in the low deposition temperature range (60-170°C), but these absorption bands disappeared at higher substrate temperatures (<170°C). Post plasma treatment of the deposited film using argon-oxygen plasma was also performed in an attempt to decrease impurities in the film, and as a result the SiMe_x band disappeared completely.<br>In conclusion, MOCVD enhansed by microwave argon-oxygen plasma treatment proved to be in low temperature deposition of silicon oxide film from HMDSO.

Journal

• Journal of The Surface Finishing Society of Japan

  Journal of The Surface Finishing Society of Japan 47 (4), 372-375, 1996

  The Surface Finishing Society of Japan

Keywords

• Microwave Plasma CVD
• Hexamethyldisiloxane
• Silicon Oxide

Details

• CRID: 1390282679091867392
• NII Article ID: 10002256191
• NII Book ID: AN1005202X
• DOI: 10.4139/sfj.47.372
• ISSN: 18843409
• ISSN: 09151869
• NDL BIB ID: 3947930
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I3947930
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed