エチレングリコール溶液中におけるシリコン陽極酸化膜のX線光電子分光法による解析 XPS Analysis of Anodic Oxide Films on Si in an Ethylene Glycol Solution
Silicon dioxide films were fabricated by anodizing single-crystal silicon wafers in a 0.04kmol m<sup>-3</sup> HNO<sub>3</sub> ethylene glycol solution at 25∼70°C for analysis by XPS with Ar sputtering and capacitance measurement.<br>In anodization, a constant 100mA current was applied up to an anode potential of 200V, then the potential was maintained at this value.<br>The maximum anode potential was reached 200V at 45°C, and the current decay in potentiostatic periods was slowest at this temperature.<br>XPS O 1s and Si 2p spectra showed that anodic oxide film formed at 45°C is thicker than any film formed at other temperatures, and that the film/substrate interface of samples anodized at 45°C is relatively rough compared to that fabricated at other temperatures. Anodic oxide film capacitance was minimum at 45°C.
- 表面技術 = The Journal of the Surface Finishing Society of Japan
表面技術 = The Journal of the Surface Finishing Society of Japan 47(7), 607-610, 1996-07
The Surface Finishing Society of Japan