エチレングリコール溶液中におけるシリコン陽極酸化膜のX線光電子分光法による解析 XPS Analysis of Anodic Oxide Films on Si in an Ethylene Glycol Solution

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Silicon dioxide films were fabricated by anodizing single-crystal silicon wafers in a 0.04kmol m<sup>-3</sup> HNO<sub>3</sub> ethylene glycol solution at 25∼70°C for analysis by XPS with Ar sputtering and capacitance measurement.<br>In anodization, a constant 100mA current was applied up to an anode potential of 200V, then the potential was maintained at this value.<br>The maximum anode potential was reached 200V at 45°C, and the current decay in potentiostatic periods was slowest at this temperature.<br>XPS O 1s and Si 2p spectra showed that anodic oxide film formed at 45°C is thicker than any film formed at other temperatures, and that the film/substrate interface of samples anodized at 45°C is relatively rough compared to that fabricated at other temperatures. Anodic oxide film capacitance was minimum at 45°C.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(7), 607-610, 1996-07 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002256783
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    3995260
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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