AIP法によるTi-60at%Hf合金の窒化物薄膜作製と反応性に関する研究 Preparation and Reaction Probability of Nitrogen on Ti-60at% Hf Nitride Film by Arc Ion Plating

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The arc ion plating (AIP) process uses a vacuum arc discharge with which almost all types of ceramic thin film can be formed. In this study, thin films of 40at% Ti-60at% Hf nitride were prepared on WC-Co substrates by AIP. The maximum microhardness obtained was Hv: 4000kgf/mm<sup>2</sup>. The crystal structure and orientation of the formed thin films were analyzed using X-ray diffraction (CuK α, 40kV-30mA). Reduced surface roughness and an increase deposition rate were studies as a function of nitrogen gas pressure.<br>This process can be characterized by the high ionization rate of a metal vapor flux. Few studies have been made, however, on quantitatively assessing gas reactivity in a plasma process. The reaction probability of nitrogen gas in AIP was calculated from the viewpoint of metal-gas reaction kinetics, based on available data such as film deposition and nitrogen impingement rates on the substrate and compositional changes in films. The reaction probability (<i>r</i><sub>N<sub>2</sub></sub>=10<sup>-2</sup>) of nitrogen in Ti<sub>0.4</sub>Hf<sub>0.6</sub>N formation by AIP in this study was found to be equal to that in the hollow cathode discharge (HCD) process and higher than that in the activated reactive evaporation (ARE) by factors of three to ten.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(8), 689-695, 1996-08 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002256981
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4012577
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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