電子シャワー法によるITO薄膜の作製とNO_2検知特性の評価 Preparation of ITO Thin Films by Electron Shower Method and NO_2 Sensing Properties of the Films

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When indium tin oxide (ITO) film was prepared using an electron shower, it was found that ITO whiskers grew due to the vapor-liquid-solid (VLS) mechanism. The whisker radius was 10nm and the length 600nm. To grow whiskers, the substrate temperature should be above 200°C and the deposition rate above 6Å/s. Two types of whiskers grew: (a) those grown along the substrate during early growth (t≤30s), and (b) those grown vertical to the substrate at t≥30s.<br>ITO film consisting of (a) whiskers showed high gas-sensing characteristic for NO<sub>2</sub> at 200°C. Its sensitivity for 500ppm NO<sub>2</sub> was 10 times higher than that of other films consisting of (b) whiskers or plate-like crystals, for example. This shows that ITO film prepared using an electron shower is a potential candidate for semiconductor sensor elements.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(9), 767-772, 1996-09 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002257135
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4028865
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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