低出力Arイオン照射前処理によるTi薄膜/Si基板間の密着性の改善 [in Japanese] Adhesion Enhancement between Ti Films and Si Substrates by Low Power Ar Ion Bombardment [in Japanese]
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The influence of Ar ion bombardment of Si (100) substrates on adhesion between Ti thin films and Si substrates was investigated. To evaluate adhesion, the internal stress in overcoated films was used. TEM, AES, and RBS observation were used to observe the interface between Ti and Si. In the low power density of Ar ions, adhesion was not high enough because of insufficient substrates cleaning. When power density was too high, adhesion was not high enough, either. This is due to the incorporation of Ar atoms at the interface during Ar ion bombardment. To enhance adhesion, it is important to optimize the power density of Ar ion bombardment.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 47(10), 858-862, 1996-10
The Surface Finishing Society of Japan