低出力Arイオン照射前処理によるTi薄膜/Si基板間の密着性の改善 Adhesion Enhancement between Ti Films and Si Substrates by Low Power Ar Ion Bombardment

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抄録

The influence of Ar ion bombardment of Si (100) substrates on adhesion between Ti thin films and Si substrates was investigated. To evaluate adhesion, the internal stress in overcoated films was used. TEM, AES, and RBS observation were used to observe the interface between Ti and Si. In the low power density of Ar ions, adhesion was not high enough because of insufficient substrates cleaning. When power density was too high, adhesion was not high enough, either. This is due to the incorporation of Ar atoms at the interface during Ar ion bombardment. To enhance adhesion, it is important to optimize the power density of Ar ion bombardment.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(10), 858-862, 1996-10 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002257306
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4057355
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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