Adhesion Enhancement between Ti Films and Si Substrates by Low Power Ar Ion Bombardment.

• KONDO Ichiharu

  Nippondenso Co., Ltd. Production Eng. R & D, Dept. 2

• KONDO Kenji

  Nippondenso Co., Ltd. Production Eng. R & D, Dept. 2

• TAKENAKA Osamu

  Nippondenso Co., Ltd. Production Eng. R & D, Dept. 2

• NAGATA Masahiko

  Nippondenso Co., Ltd.

• KUSANO Eiji

  Kanazawa Inst. of Technol.

• KINBARA Akira

  Kanazawa Inst. of Technol.

Bibliographic Information

Other Title

• 低出力Ａｒイオン照射前処理によるＴｉ薄膜／Ｓｉ基板間の密着性の改善
• テイ シュツリョク Ar イオン ショウシャ マエショリ ニヨル Ti ハクマ

Abstract

The influence of Ar ion bombardment of Si (100) substrates on adhesion between Ti thin films and Si substrates was investigated. To evaluate adhesion, the internal stress in overcoated films was used. TEM, AES, and RBS observation were used to observe the interface between Ti and Si. In the low power density of Ar ions, adhesion was not high enough because of insufficient substrates cleaning. When power density was too high, adhesion was not high enough, either. This is due to the incorporation of Ar atoms at the interface during Ar ion bombardment. To enhance adhesion, it is important to optimize the power density of Ar ion bombardment.

Journal

• Journal of The Surface Finishing Society of Japan

  Journal of The Surface Finishing Society of Japan 47 (10), 858-862, 1996

  The Surface Finishing Society of Japan

Keywords

• Ar Ion Bombardment
• Adhesion
• Thin Films
• Titanium
• Silicon

Details

• CRID: 1390282679092526208
• NII Article ID: 10002257306
• NII Book ID: AN1005202X
• DOI: 10.4139/sfj.47.858
• COI: 1:CAS:528:DyaK28XmsVemt7c%3D
• ISSN: 18843409
• ISSN: 09151869
• ISSN: http://id.crossref.org/issn/09151869
• NDL BIB ID: 4057355
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4057355
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed