ポーラスSiの発光特性および微細構造に及ぼす電解エッチング電流密度の影響 Influence of Electrochemical Etching Current Density on Porous Si Luminescence Properties and Microstructure

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A porous silicon layer (PSL) was prepared on single-crystal p-type Si (100) wafers with electrochemical etching in HF solutions at different current densities to explore the effect of current density on the PSL luminescence properties and microstructure. Luminesence was evaluated by measuring photoluminescence (PL) spectra. The microstructure was observed using FE-SEM, TEM, and CLSM. The surface composition was determined using FT-IR analysis. The PL intensity emitted by the PSL increased with increasing electrochemical etching current density. TEM images indicated that the PSL prepared on a Si specimen with a specific resistivity of 1kΩm consisted of dispersed ultrafine Si particles with a diameter of 2∼5nm. The structure of the PSL prepared on a Si specimen with a specifis resistivity of 0.1Ωm was coarse and columnar. The PSL microstructure (0.1Ωm) became fine and granular with increasing current density. FT-IR spectra showed that the surface SiH<sub>x</sub> concentration of PSL decreased with increasing current density. From these results, we concluded that the quantum confinement effect is operative on the visible luminescence from the PSL, and the surface compound consisting of SiH<sub>x</sub> forms surface states reducing the luminescence intensity. The electronic band models of the SiH<sub>x</sub>/PSL/p-Si substrate are proposed to explain the visible PL mechanism.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan

    表面技術 = The Journal of the Surface Finishing Society of Japan 47(11), 949-956, 1996-11

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002257523
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4087651
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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