アークイオンプレーティング法によるポリカーボネイト基板上へのTiNの低温成膜 [in Japanese] Preparation of TiN Film at a Low Temperature on Polycarbonate Substrate by Arc Ion Plating Method [in Japanese]
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TiN films were prepared on a polycarbonate substrate by the arc ion plating method. Two types of bias generators (d c and r f.) were used to apply voltage to the substrate. The optimum N<sub>2</sub> gas pressure was very low (2×10<sup>-3</sup> Torr) and the optimum d c bias voltage was -400V, when a d c bias generator was used. But many cracks were observed in the films.<br>We were able to prepare a non-cracked, lustrous, gold-color TiN film when an r f self bias voltage of -100V was applied and Ti was undercoated on the substrate before deposition of TiN film.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 48(1), 31-35, 1997-01-01
The Surface Finishing Society of Japan