アークイオンプレーティング法によるポリカーボネイト基板上へのTiNの低温成膜 Preparation of TiN Film at a Low Temperature on Polycarbonate Substrate by Arc Ion Plating Method

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TiN films were prepared on a polycarbonate substrate by the arc ion plating method. Two types of bias generators (d c and r f.) were used to apply voltage to the substrate. The optimum N<sub>2</sub> gas pressure was very low (2×10<sup>-3</sup> Torr) and the optimum d c bias voltage was -400V, when a d c bias generator was used. But many cracks were observed in the films.<br>We were able to prepare a non-cracked, lustrous, gold-color TiN film when an r f self bias voltage of -100V was applied and Ti was undercoated on the substrate before deposition of TiN film.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 48(1), 31-35, 1997-01-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002258096
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4118793
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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