高純度銅蒸着原料を用いた蒸着膜のエッチングおよびめっき特性 Chemical Etching and Plating Characteristics of Vapor Deposited Copper Film Using High Purity Copper Sources

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Cu 99.99mass% (4N) and Cu 99.9999mass% (6N) copper source metals were used for vapor deposition to consider the effects of the purity of the source metal on the photochemical etching and electroplating of vapor deposited copper. In comparison to film deposited using a 4N copper source, the film deposited using a 6N source exhibited superior etching pattern wall smoothness in photochemical etching and was free from dendrite growth in nickel plating.<br>X-ray diffraction analysis showed no difference in copper crystal orientation between films formed with the 4N and 6N sources. Sputtering AES however, showed that there was less oxygen content in the copper surface deposited using the 6N copper source.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan  

    表面技術 = The Journal of the Surface Finishing Society of Japan 48(5), 533-538, 1997-05-01 

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002259075
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    4217060
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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