均一液相法によるZnO-In_2O_3系透明導電物質の低温合成 Low Temperature Preparation of Transparent Conducting Material in ZnO-In_2O_3 System by Homogenenous Aqueous Solution Method
Formation of both (Zn<SUB>1-x</SUB>In<SUB>x</SUB>)O<SUB>1+x/2</SUB> solid solution and (ZnO)<SUB>m</SUB>In<SUB>2</SUB>O<SUB>3</SUB> compound was investigated by firing the precipitates through mixed aqueous solution of Zn and In nitrates. The solid solution range was enlarged to 15% by its gel formation adding citric acid. The homologous (ZnO)<SUB>m</SUB>In<SUB>2</SUB>O<SUB>3</SUB> compound (m>12) with very long interlayer distance precipitated around 650°C by heating the homogenous solid solution. It gradually decomposed to the compounds with m<12 and finally crystallized as a compound with the corresponding starting m-composition. Its thin film was prepared by dip coating method using diethylene glycol as a solvent. The film fired at 600°C was transparent in a wavelength range longer than 400nm. Its electrical resistivity gradually decreased to ca. 0.01Ωcm with the amount of doped In.
粉体および粉末冶金 46(2), 189-193, 1999-02-15
Japan Society of Powder and Powder Metallurgy