Low Temperature Preparation of Transparent Conducting Material in ZnO-In2O3 System by Homogenenous Aqueous Solution Method.
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- Kikkawa Shinichi
- ISIR, Osaka University
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- Kanasaki Hiroshi
- ISIR, Osaka University
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- Takahashi Masao
- ISIR, Osaka University
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- Kalyan Adhikary
- ISIR, Osaka University
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- Hirota Ken
- Faculty of Engineering, Doshisha University
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- Yamaguchi Osamu
- Faculty of Engineering, Doshisha University
Bibliographic Information
- Other Title
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- 光機能材料 均一液相法によるZnO‐In2O3系透明導電物質の低温合成
- キンイツ エキソウホウ ニ ヨル Zno-In2O3ケイ トウメイ ドウデン ブッシツ ノ テイオン ゴウセイ
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Abstract
Formation of both (Zn1-xInx)O1+x/2 solid solution and (ZnO)mIn2O3 compound was investigated by firing the precipitates through mixed aqueous solution of Zn and In nitrates. The solid solution range was enlarged to 15% by its gel formation adding citric acid. The homologous (ZnO)mIn2O3 compound (m>12) with very long interlayer distance precipitated around 650°C by heating the homogenous solid solution. It gradually decomposed to the compounds with m<12 and finally crystallized as a compound with the corresponding starting m-composition. Its thin film was prepared by dip coating method using diethylene glycol as a solvent. The film fired at 600°C was transparent in a wavelength range longer than 400nm. Its electrical resistivity gradually decreased to ca. 0.01Ωcm with the amount of doped In.
Journal
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- Journal of the Japan Society of Powder and Powder Metallurgy
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Journal of the Japan Society of Powder and Powder Metallurgy 46 (2), 189-193, 1999
Japan Society of Powder and Powder Metallurgy
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Details 詳細情報について
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- CRID
- 1390282681285410432
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- NII Article ID
- 10002261908
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- NII Book ID
- AN00222724
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- ISSN
- 18809014
- 05328799
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- NDL BIB ID
- 4655591
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed