RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2*1 Surface.

  • KIM Ki-Seon
    Research Institute for Scientific Measurements, Tohoku University
  • TAKAKUWA Yuji
    Research Institute for Scientific Measurements, Tohoku University
  • ABUKAWA Tadashi
    Research Institute for Scientific Measurements, Tohoku University
  • KONO Shozo
    Research Institute for Scientific Measurements, Tohoku University

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  • RHEED-AES Observation of Sb Desorption on a Single-Domain Si(001)2×1 Surface
  • RHEED-AES Observation of Sb Desorption

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Abstract

Sb desorption on a single-domain Si(001)2×1 surface has been studied using grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy (RHEED-AES). From the time evolution of Sb coverage, θSb, during Sb desorption as monitored from Sb MNN Auger spectra, we have found that the Sb desorption kinetics are divided into two coverage regions; (I) 1 ML>θSb>0.3 ML and (II) 0.3 ML>θSb>0 ML. It was also found that the Sb desorption is a first-order reaction in each coverage region with activation energies of (I) 3.61 eV and (II) 3.63 eV and pre-exponential factors of desorption coefficient of (I) 2.9×1015 S-1 and (II) 5.0×1015 S-1. This difference in pre-exponential factor is explained in term of the change in the morphology and structure of Sb layer as monitored by RHEED.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 18 (8), 501-505, 1997

    The Surface Science Society of Japan

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