GaAs表面再構成構造とトリメチルガリウムの表面反応 Trimethylgallium Surface Reaction as a Function of GaAs Reconstructed Structure

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The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.

収録刊行物

  • 表面科学  

    表面科学 18(12), 796-802, 1997-12-10 

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002265853
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03885321
  • NDL 記事登録ID
    4352382
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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