ＧａＡｓ表面再構成構造のトリメチルガリウムの表面反応

• 佐々木 正洋

  筑波大学物理工学系

• 吉田 清輝

  古河電工横浜研究所

書誌事項

タイトル別名

• Trimethylgallium Surface Reaction as a Function of GaAs Reconstructed Structure.
• GaAs ヒョウメン サイ コウセイ コウゾウ ト トリメチル ガリウム ノ

抄録

The surface reaction of trimethylgallium (TMG) is discussed as a function of relaxed or reconstructed GaAs surface structure on the basis of pulsed molecular beam scatterings from stoichiometry controlled GaAs(100), (110) and (111)B surfaces. The results are interpreted within the framework of the precursor-mediated adsorption mechanism, where TMG surface reaction is determined by the depth of the precursor state and the stability of the surface structure. It is believed that the precursor state is deepened by the electrostatic behavior in the GaAs surface structure. The topmost As atoms which have only bonds to As atoms hinder TMG trapping in the precursor state; implying the mechanism of the growth suppression on the (2×2)-reconstructed (111)B surface and the As-passivation technique.

収録刊行物

• 表面科学

  表面科学 18 (12), 796-802, 1997

  公益社団法人 日本表面科学会

詳細情報

• CRID: 1390001206455122432
• NII論文ID: 10002265853
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.18.796
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 4352382
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4352382
• Web Site: http://www.jstage.jst.go.jp/article/jsssj1980/18/12/18_12_796/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可