Si中のSbの異常表面偏析 Anomalous Surface Segregation of Sb in Si

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著者

    • 木村 健二 KIMURA Kenji
    • 京都大学工学研究科機械物理工学専攻 Department of Engineering Physics and Mechanics, Kyoto University

抄録

A delta-function-shaped Sb doping spike in Si is prepared by deposition of Sb on a Si(001) surface followed by lowtemperature molecular beam epitaxy of Si. The depth profile of the Sb atoms is measured using high-resolution Rutherford backscattering spectroscopy, yielding a depth resolution of 0.3nm. The observed profile shows two peaks conesponding to the delta-doped layer (of width 0.5nm) and Sb atoms on the surface. The latter are due to surface segregation of Sb atoms during the growth of the Si cap layer. The surface segregation rate is derived from the observed results at temperatures 70-280°C. It is larger than the value extrapolated from high- temperature (>400°C) data by several orders of magnitude and shows a very weak temperature dependence as compared to the high-temperature data. These features indicate a new surface segregation mechanism at low temperature. A mechanism for this anomalous segregation is discussed.

収録刊行物

  • 表面科学  

    表面科学 20(4), 256-261, 1999-04-10 

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002267553
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03885321
  • NDL 記事登録ID
    4707371
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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