GaAs(111)A基板状MBE成長過程の実空間観察 Real-Space Observation of MBE Growth Processes on GaAs(111) A Substrates

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Using a scanning electron microscope-molecular beam epitaxy system, detailed near-equilibrium growth processes of island nucleation, coalescence, and step motion are clearly observed for the growth of GaAs on (111)A substrates. These observations allow the quantitative analysis of the growth processes on the basis of the BCF theory that provides the standard model for crystal growth. As an example, the Ga adatom surface diffusion length is directly measured from the dependence of measured step velocity on the Ga arrival rate. The presence of denuded zone in the distribution of two-dimensional nuclei is clearly confirmed, quantitativelly showing good agreement with the diffusion length obtained from the step velocity.

収録刊行物

  • 表面科学  

    表面科学 20(5), 367-372, 1999-05-10 

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002268071
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03885321
  • NDL 記事登録ID
    4720400
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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