Scanning Probe Microscopy: Present Status and New Development. Reul-Space Observation of MBE Growth Processes on GaAs(111) A Substrates.

• YAMAGUCHI Hiroshi

  NTT Basic Research Laboratories

• HOMMA Yoshikazu

  NTT Basic Research Laboratories

Bibliographic Information

Other Title

• ＧａＡｓ（１１１）Ａ基板上ＭＢＥ成長過程の実空間観察
• GaAs 111 A キバン ジョウ MBE セイチョウ カテイ ノ ジツ クウカン カンサツ

Abstract

Using a scanning electron microscope-molecular beam epitaxy system, detailed near-equilibrium growth processes of island nucleation, coalescence, and step motion are clearly observed for the growth of GaAs on (111)A substrates. These observations allow the quantitative analysis of the growth processes on the basis of the BCF theory that provides the standard model for crystal growth. As an example, the Ga adatom surface diffusion length is directly measured from the dependence of measured step velocity on the Ga arrival rate. The presence of denuded zone in the distribution of two-dimensional nuclei is clearly confirmed, quantitativelly showing good agreement with the diffusion length obtained from the step velocity.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 20 (5), 367-372, 1999

  The Surface Science Society of Japan

Details

• CRID: 1390001206456742784
• NII Article ID: 10002268071
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.20.367
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 4720400
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4720400
• Web Site: http://www.jstage.jst.go.jp/article/jsssj1980/20/5/20_5_367/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed