塩素吸着シリコン表面のレーザー励起エッチング Laser-induced Etching of Chlorinated Silicon Surfaces

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Measurements of excitation spectra of photoetching of chlorinated Si(111)7×7 surfaces stimulated by ultraviolet nanosecond pulse laser light revealed that there are two distinct spectral peaks, one (α-peak) being located near 290nm and another (β-peak) at 245 nm. The α-peak exhibits a strong supralinear dependence on light intensity above laser fluence of∼100mJ/cm<SUP>2</SUP> pulse, while the β-peak grows linearly with light intensity. The red shift of the α-peak with increasing intensity coincides with the shift of laser abration, which strongly suggests that the origin of the α-peak photoetching is thermal etching enhanced by surface heating due to interband transition in the substrate. The dependence on polarization of the incident light suggests that the β-peak photoetching originates in excitation of hot carriers in the substrate which are captured resonantly by the anti-bonding states of the adsorbate chlorides resulting in destabilization of the molecules.

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  • 表面科学  

    表面科学 20(6), 393-400, 1999-06-10 

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002268107
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03885321
  • NDL 記事登録ID
    4757713
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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