Direct ICP-AES Determination of Trace Impurities in Silicon Dioxide Using Fluorinating Electrothermal Vaporization with Slurry Sampling.

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  • Direct ICP-AES Determination of Trace I

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Abstract

Based on the selective volatilization taking place between the matrix and the analyte in the graphite furnace, a new method for a direct ICP-AES determination of trace impurities in SiO2 powder using electrothermal vaporization (ETV) as a slurry-sampling technique is described. A polytetrafluoroethylene (PTFE) emulsion is used as a fluorinating reagent to promote the vaporization of impurity elements from SiO2 powder. The fluorinating vaporization and transportation behaviors, the matrix effects and the particle-size effects have been investigated systematically. When the sampling volumes are 10μl, the detection limits of Cu, Cr, Fe and Ti are 1.05, 1.58, 1.06 and 0.9μg l-1, respectively, and the RSDs are in the range of 1.9-4.1%. The proposed method has been applied to analyze SiO2 powder without any chemical pretreatment. The determined values are in good agreement with the results obtained by using acid decomposition-pneumatic nebulization ICP-AES.

Journal

  • Analytical Sciences

    Analytical Sciences 13 (4), 595-599, 1997

    The Japan Society for Analytical Chemistry

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