Direct ICP-AES Determination of Trace Impurities in Silicon Dioxide Using Fluorinating Electrothermal Vaporization with Slurry Sampling.
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- PENG Tianyou
- Department of Chemistry, Wuhan University
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- JIANG Zucheng
- Department of Chemistry, Wuhan University
Bibliographic Information
- Other Title
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- Direct ICP-AES Determination of Trace I
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Abstract
Based on the selective volatilization taking place between the matrix and the analyte in the graphite furnace, a new method for a direct ICP-AES determination of trace impurities in SiO2 powder using electrothermal vaporization (ETV) as a slurry-sampling technique is described. A polytetrafluoroethylene (PTFE) emulsion is used as a fluorinating reagent to promote the vaporization of impurity elements from SiO2 powder. The fluorinating vaporization and transportation behaviors, the matrix effects and the particle-size effects have been investigated systematically. When the sampling volumes are 10μl, the detection limits of Cu, Cr, Fe and Ti are 1.05, 1.58, 1.06 and 0.9μg l-1, respectively, and the RSDs are in the range of 1.9-4.1%. The proposed method has been applied to analyze SiO2 powder without any chemical pretreatment. The determined values are in good agreement with the results obtained by using acid decomposition-pneumatic nebulization ICP-AES.
Journal
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- Analytical Sciences
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Analytical Sciences 13 (4), 595-599, 1997
The Japan Society for Analytical Chemistry
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Details 詳細情報について
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- CRID
- 1390001204253441920
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- NII Article ID
- 130003528180
- 10002412232
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- NII Book ID
- AA10500785
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- COI
- 1:CAS:528:DyaK2sXlsVCltL0%3D
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- ISSN
- 13482246
- 09106340
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- NDL BIB ID
- 4277871
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed