Performance improvement of Self Integration Device

• SANO Masahiko

  NEC Corporation, 1st Development Department, Material Development Center

• MIYAMOTO Keiji

  NEC Corporation, 1st Development Department, Material Development Center

• ODA Naoki

  NEC Corporation, 1st Development Department, Material Development Center

• FUJINO Yoshio

  NEC Corporation, 1st Development Department, Material Development Center

Bibliographic Information

Other Title

• 自己積分型赤外線検出素子の高性能化

Journal

• 日本赤外線学会誌 = Journal of the Japan Society of Infraed Science and Technolog

  日本赤外線学会誌 = Journal of the Japan Society of Infraed Science and Technolog 5 (1), 24-32, 1995-07-10

Keywords

• HgCdTe
• Photoconductive detector
• Solid State Recrystallization (SSR)
• Responsivity
• Detectivity (D*)
• Modulation Trabsfer Function (MTF)

Details

• CRID: 1570572699110164480
• NII Article ID: 10002436178
• NII Book ID: AN10433588
• ISSN: 09167900
• Text Lang: ja
• Data Source:
  • CiNii Articles