スパッタリングによるZnS : TbF3薄膜の形成条件とEL特性 [in Japanese] ZnS : TbFx Thin Film EL Property Dependence Sputtering Conditions [in Japanese]
Access this Article
Search this Article
We studied the relationship between the properties and brightness of ZnS: TbF<sub>x</sub> phosphor films synthesized under different sputtering conditions.<br>We clarified that the F/Tb ratio in films, ZnS (111) lattice plane distance (d), and the half width of the ZnS (111) peak profile (Δ2θ) markedly influenced emission brightness.<br>These properties were varied with sputtering conditions such as RF power, sputtering gas pressure, substrate and annealing temperatures.<br>We found the optimum conditions for synthesizing a brighter green ZnS: TbF<sub>x</sub> phosphor film to be 125W RF power, 1.33Pa sputtering gas pressure, 200°Csubstrate temperature and 300°Cannealing temperature.
- Jitsumu Hyomen Gijutsu
Jitsumu Hyomen Gijutsu 49(2), 180-184, 1998-02-01
The Surface Finishing Society of Japan