Fast Penetration of Cu in Ni of Cu/Ni/Cu Diffusion Couples Due to Diffusion Induced Recrystallization.

• Moriyama Miki

  Graduate Student, Tokyo Institute of Technology

• Kajihara Masanori

  Department of Materials Science and Engineering, Tokyo Institute of Technology

抄録

Rapid penetration of Cu in Ni owing to diffusion induced recrystallization (DIR) in the Ni(Cu) system was experimentally examined using the Cu/Ni/Cu diffusion couples consisting of pure Cu single crystals and a pure Ni polycrystalline specimen annealed at 923 and 1023 K in previous studies. The experimental results have been theoretically analyzed to find a new criterion for the occurrence of DIR in the present study. According to the experimental results, the thickness l of the DIR region in the Ni phase increases in proportion to the square root of the annealing time t. Thus, if we define the parameter D^h as the hypothetical diffusion coefficient which gives the overall penetration rate of Cu across the DIR region, the thickness l is described as a function of the annealing time t by the equation l=2√D^ht. The temperature dependence of D^h has been obtained from the experimental results and then compared with that of the volume diffusion coefficient D^v of Cu in Ni. From the comparison, it is concluded that the ratio D^h/D^v should be greater than thirty in order for DIR to take place in the Ni(Cu) system.

収録刊行物

• ＩＳＩＪ　Ｉｎｔｅｒｎａｔｉｏｎａｌ

  ＩＳＩＪ　Ｉｎｔｅｒｎａｔｉｏｎａｌ 38 (5), 489-494, 1998

  一般社団法人 日本鉄鋼協会

キーワード

• diffusion induced recrystallization
• Ni–Cu system
• grain boundary migration
• grain boundary diffusion

詳細情報

• CRID: 1390001206451972736
• NII論文ID: 10002459533
• NII書誌ID: AA10680712
• DOI: 10.2355/isijinternational.38.489
• ISSN: 13475460
• ISSN: 09151559
• Web Site: http://www.jstage.jst.go.jp/article/isijinternational1989/38/5/38_5_489/_pdf
• 本文言語コード: en
• データソース種別:
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  • Crossref
  • CiNii Articles
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