Proposal of Near-Infrared Laser Diode Spectroscopy at 1.74μm for HCl Monitor in Semiconductor Processes

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抄録

Near-infrared laser diode spectroscopy at 1.74μm is applied to the detection of trace amounts of HCl in semiconductor process equipment such as an epitaxial growth reactor of Si. The application of the experimental system to different situations of HCl emissions is tested : the low-pressure condition is employed for residual gas monitoring, while the atmospheric pressure condition is used for reaction by-product monitoring. The detection limit of a 50-cm-long path cell is 1 ppm at low pressure (1.07×10<SUP>4</SUP> Pa) and 100 ppm at atmospheric pressure. A wide dynamic range of 1 ppm to 1% and a linear response to the HCl concentration are also obtained, both of which are favorable for system integration to manufacturing processes.

収録刊行物

  • 真空

    真空 42(1), 31-36, 1999-01

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476050
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    05598516
  • NDL 記事登録ID
    4643880
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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