カーボン60吸着シリコン表面の電子状態 Electronic State of the Carbon 60 Adsorbed Silicon Surfaces

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We have investigated the coverage-dependent electronic structures of C<SUB>60</SUB> molecules adsorbed on the Si (111) -(7×7) and Si (001) -(2×1) surfaces using photoelectron spectroscopy. The valence band spectra show that the highest occupied molecular orbital (HOMO) of a C<SUB>60</SUB> molecule splits into two peaks on both surfaces at a coverage lower than 0.25 monolayer. These split peaks are assigned to be the shifted HOMO and the bonding state, with the polarization-dependent measurements and the Si 2<I>p</I> core level spectra. The binding energies of the molecular orbitals and the C 1<I>s</I> core level show a small shift on the Si (001) -(2×1) surface, and no shift on the Si (111) -(7×7) surface with decreasing the coverage. These results indicate that the strong interaction between C<SUB>60</SUB> molecules and the surfaces has a covalent character on the Si (111) -(7×7) surface, and both covalent and ionic characters on the Si (001) -(2×1) surface. We attribute the difference in the charge states of C<SUB>60</SUB> molecules to the different surface structures.

収録刊行物

  • 真空

    真空 42(3), 143-146, 1999-03

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476164
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714037
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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