モンテカルロ・シミュレーションによるSi(100), GaAs(100)上の分子線エピタクシャル成長の比較 Comparative Study of MBE Growth on Si(001) and GaAs(001) by Monte Carlo Simulation
The growth on GaAs (100) is studied by Monte Carlo simulation in comparison with the growth on Si (100). The step density variations during the growth and their temperature dependence show good agreement with the reported experimental RHEED intensity oscillations. This result and the corresponding surface morphology show that As plays a dominant role during the growth.
真空 42(3), 147-150, 1999-03
The Vacuum Society of Japan