Comparative Study of MBE Growth on Si(001) and GaAs(001) by Monte Carlo Simulation.

• KAWAMURA Takaaki

  Department of Physics, Yamanashi University

• ISHII Akira

  Department of Applied Mathematics and Physics, Tottori University

Bibliographic Information

Other Title

• モンテカルロ・シミュレーションによるＳｉ（１００），ＧａＡｓ（１００）上の分子線エピタクシャル成長の比較
• モンテカルロ シミュレーション ニ ヨル Si 100 GaAs 100 ジョウ ノ ブンシセン エピタクシャル セイチョウ ノ ヒカク

Abstract

The growth on GaAs (100) is studied by Monte Carlo simulation in comparison with the growth on Si (100). The step density variations during the growth and their temperature dependence show good agreement with the reported experimental RHEED intensity oscillations. This result and the corresponding surface morphology show that As plays a dominant role during the growth.

Journal

• Shinku

  Shinku 42 (3), 147-150, 1999

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204063653632
• NII Article ID: 10002476176
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.42.147
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 4714078
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4714078
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed