LiNbO_3基板上へのZnOスパッタ薄膜の形成 Deposition of ZnO Thin Films on LiNbO_3 Substrates Using Sputtering Technique
ZnO thin films were deposited on several LiNbO<SUB>3</SUB> substrates with specified orientation by a rf-sputtering technique. The films were deposited on the substrates at room temperature or 573 K in various oxygen-argon atmospheres. From X-ray diffraction pattern, ZnO (002) reflection peak was measured for both of x and z cut LiNbO<SUB>3</SUB> substrates. ZnO (002) peak intensity depended on gas flow rate of oxygen to argon and anneal temperature. When the film was deposited on z cut LiNbO<SUB>3</SUB> substrate at 573 K in O<SUB>2</SUB> (20%) + Ar (80%) gas and annealed at 773 K in air, the film showed the crystalline growth highly oriented at  direction.
真空 42(3), 163-166, 1999-03
The Vacuum Society of Japan