ITO薄膜のキャリア輸送現象に対するフォノン散乱の寄与 Participation of Phonon Scattering in ITO Films

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Electron carrier transport phenomena in indium tin oxide (ITO) films were studied. The films were deposited by dc magnetron sputtering using a sintered oxide target for the substrate temperature of room temperature to 773 K. Crystallinity of the films was estimated by X-ray diffraction (XRD) method. Temperature dependence of carrier concentration and mobility were estimated by Hall voltage measurements for a temperature range 10 K to room temperature. The XRD results show that the crystallinity of the ITO films increases with the substrate temperature. The crystalline size obtained from the XRD results also shows the improvement in crystallinity. The Hall measurement results revealed that all the ITO films were degenerated semiconductors. In addition, the negative temperature dependence of the Hall mobility was observed for films deposited at 673 or 773 K. This negative temperature dependence implies that the dominant scattering center for electron carriers in highly crystallized ITO films is phonon scattering.

収録刊行物

  • 真空  

    真空 42(3), 179-182, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476237
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714317
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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