Participation of Phonon Scattering in ITO Films.
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- TSUTSUI Mitsuo
- AMS R & D C, Kanazawa Institute of Technology
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- KOBAYASHI Toshiki
- AMS R & D C, Kanazawa Institute of Technology
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- KIKUCHI Naoto
- AMS R & D C, Kanazawa Institute of Technology
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- KUSANO Eiji
- AMS R & D C, Kanazawa Institute of Technology
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- NANTO Hidehito
- AMS R & D C, Kanazawa Institute of Technology
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- KINBARA Akira
- AMS R & D C, Kanazawa Institute of Technology
Bibliographic Information
- Other Title
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- ITO薄膜のキャリア輸送現象に対するフォノン散乱の寄与
- ITO ハクマク ノ キャリア ユソウ ゲンショウ ニ タイスル フォノン サンラン ノ キヨ
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Abstract
Electron carrier transport phenomena in indium tin oxide (ITO) films were studied. The films were deposited by dc magnetron sputtering using a sintered oxide target for the substrate temperature of room temperature to 773 K. Crystallinity of the films was estimated by X-ray diffraction (XRD) method. Temperature dependence of carrier concentration and mobility were estimated by Hall voltage measurements for a temperature range 10 K to room temperature. The XRD results show that the crystallinity of the ITO films increases with the substrate temperature. The crystalline size obtained from the XRD results also shows the improvement in crystallinity. The Hall measurement results revealed that all the ITO films were degenerated semiconductors. In addition, the negative temperature dependence of the Hall mobility was observed for films deposited at 673 or 773 K. This negative temperature dependence implies that the dominant scattering center for electron carriers in highly crystallized ITO films is phonon scattering.
Journal
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- Shinku
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Shinku 42 (3), 179-182, 1999
The Vacuum Society of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390001204063698944
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- NII Article ID
- 10002476237
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- NII Book ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL BIB ID
- 4714317
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed