書誌事項
- タイトル別名
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- Participation of Phonon Scattering in ITO Films.
- ITO ハクマク ノ キャリア ユソウ ゲンショウ ニ タイスル フォノン サンラン ノ キヨ
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抄録
Electron carrier transport phenomena in indium tin oxide (ITO) films were studied. The films were deposited by dc magnetron sputtering using a sintered oxide target for the substrate temperature of room temperature to 773 K. Crystallinity of the films was estimated by X-ray diffraction (XRD) method. Temperature dependence of carrier concentration and mobility were estimated by Hall voltage measurements for a temperature range 10 K to room temperature. The XRD results show that the crystallinity of the ITO films increases with the substrate temperature. The crystalline size obtained from the XRD results also shows the improvement in crystallinity. The Hall measurement results revealed that all the ITO films were degenerated semiconductors. In addition, the negative temperature dependence of the Hall mobility was observed for films deposited at 673 or 773 K. This negative temperature dependence implies that the dominant scattering center for electron carriers in highly crystallized ITO films is phonon scattering.
収録刊行物
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- 真空
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真空 42 (3), 179-182, 1999
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204063698944
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- NII論文ID
- 10002476237
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 4714317
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可