飛行時間型直衝突イオン散乱分光法によるSi(111)表面上のSn薄膜成長の観察 [in Japanese] Observation of Sn Thin Film Growth on Si(111) Surface Using Time of Flight Impact Collision Ion Scattering Spectroscopy [in Japanese]
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Using time of flight impact collision ion scattering spectroscopy (TOF-ICISS), we have investigated Sn thin film growth on clean Si (111) and Si (111) √3 × √3-Sn surfaces. Sn forms crystalline film with β-Sn structure on both surfaces. However, the difference of interface structure plays a decisive role for the growth orientation of the grown Sn thin film. The growth orientational relationship of the Sn film grown on the clean Si (111) surface is found to be Sn (100) <011>//Si (111) <011> and Sn (100) <010>//Si (111) <112>, but the Sn film grown on Sn (111) √3 × √3-Sn surface is rotated by 30° relative to that on the clean Si (111) surface, Sn (100) <010>//Si (111) <011> and Sn (100) <011>// Si (111) <112>. The reason for the rotation is explained by the reduction of the lattice mismatch between the β-Sn and √3 × √3-Sn lattice.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(3), 208-211, 1999-03
The Vacuum Society of Japan