原子状水素が誘起するSi(100)4×3-In 表面の構造変化過程 Structural Change Process of Si(100)4×3-In Surface Phase Induced by Atomic Hydrogen Interaction

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著者

    • 久保 理 KUBO Osamu
    • 大阪大学工学部電子工学科 Department of Electronic Engineering, Faculty of Engineering, Osaka University
    • 柳 正鐸 RYU Jeong-Tak
    • 大阪大学工学部電子工学科 Department of Electronic Engineering, Faculty of Engineering, Osaka University
    • 谷 仁 [他] TANI Hitoshi
    • 大阪大学工学部電子工学科 Department of Electronic Engineering, Faculty of Engineering, Osaka University
    • 原田 徹 HARADA Toru
    • 大阪大学工学部電子工学科 Department of Electronic Engineering, Faculty of Engineering, Osaka University
    • 布瀬 暁志 FUSE Takashi
    • 大阪大学工学部電子工学科 Department of Electronic Engineering, Faculty of Engineering, Osaka University
    • SARANIN Alexander A.
    • ロシア科学アカデミー自動制御プロセス研究所 Institute of Automation and Control Processes
    • ZOTOV Andrey V.
    • ロシア科学アカデミー自動制御プロセス研究所 Institute of Automation and Control Processes

抄録

We have investigated the structural change process induced by atomic hydrogen interaction with the 4 × 3 surface phase in the In/Si (100) system using scanning tunneling microscopy (STM) and coaxial impact collision ion scattering spectroscopy (CAICISS).<BR>It has been revealed that when the 4 × 3-In surface is exposed to atomic hydrogen, small and uniform In clusters, the size of which grows with increasing substrate temperature during hydrogen exposure, are formed on the Si surface. These clusters are not epitaxially grown crystallites but amorphous or poly-crystalline in contrast with those of H/ Si (111) √3×√3-Ag, -Al or-Pb surfaces. The initial stage of structural change process is also different from H/ Si (111) √3×√3-Ag or H/Si (111) 4 × 1-In surfaces but similar to H/Si (111) √3×√3-In surface.<BR>The In-denuded regions show not 1 × 1 but 4 × 1 periodicity. From this result, we have confirmed that the underlying atomic layer of a silicon substrate in the Si (100) 4 × 3-In surface phase is reconstructed with a 4 × 1 periodicity and proposed a model of 4 × 3-In structure.

収録刊行物

  • 真空  

    真空 42(3), 212-216, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476288
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714583
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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