有磁場マイクロ波プラズマ気相合成装置内に付着した炭素薄膜の酸素プラズマによるエッチング Oxygen Plasma Etching of Carbon Films Unintentionally Deposited on Chamber Walls in Magneto-Active Microwave Chemical Vapor Deposition System

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著者

    • 全 炯敏 JEON Hyeongmin
    • 大阪大学大学院工学研究科電気工学専攻 Department of Electrical Engineering, Osaka University
    • 八田 章光 HATTA Akimitsu
    • 高知工科大学電子光システム工学科 Department of Electronic and Photonic Systems Engineering, Kochi University of Technology

抄録

Carbon films deposited unintentionally on substrate holder and reactor walls significantly influenced on diamond nucleation and growth using magneto-active microwave plasma chemical vapor deposition method (MPCVD). In this study, the etching process of such carbon films for a reproducible cleaning process has been investigated. In order to clarify the effect of magneto-active microwave pure-oxygen plasma, CO<SUB>2</SUB> and CO products were mainly measured as functions of treatment time, plasma pressure, microwave power and substrate bias voltage. The results obtained show that there are three time regions in the etching process which may depend on the spatial distributions of the oxygen-related radicals and the carbon films in the chamber. It is found that relatively inefficient etching proceeded in the third stage, the origin of which is discussed.

収録刊行物

  • 真空  

    真空 42(3), 217-220, 1999-03 

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10002476305
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    4714590
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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