パルスレーザー堆積法によるB-C-N系薄膜の合成 [in Japanese] Synthesis of B-C-N Thin Films by Pulsed-Laser Deposition [in Japanese]
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B-C-N thin films were prepared onto silicon substrates by pulsed-laser deposition (PLD) method. The targets were prepared by hot-pressing of mixtures of hexagonal boron nitride (h-BN) and graphite powders with various weight ratios. The deposited films were evaluated by the x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Fourier transform infrared spectroscopy (FT-IR) and x-ray diffraction (XRD). XRD patterns of the deposited films show that intensity of peak corresponding to h-BN (002) tends to increase with increasing content of h-BN in the target. Raman spectra show that carbon in the deposited films composes carbon network like diamond-like carbon (DLC) or amorphous carbon. FT-IR spectra and XPS spectra indicate existence of B-C and C-N bond as well as that of B-N and C-C bond within the deposited films.
- Journal of the Vacuum Society of Japan
Journal of the Vacuum Society of Japan 42(3), 225-228, 1999-03
The Vacuum Society of Japan